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| Silicon Switching Diodes BAW 79 A ... BAW 79 D For high-speed switching q High breakdown voltage q Common cathode q Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D Marking GE GF GG GH Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 Pin Configuration Package1) SOT-89 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 s Total power dissipation TS = 115 C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 50 Values BAW BAW 100 100 1 1 10 1 150 - 65 ... + 150 W C 200 200 Unit BAW 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS 175 35 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 79 A ... BAW 79 D Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 20 mA Test circuit for reverse recovery time CD trr - - 10 1 - - pF s Values typ. max. Unit V(BR) 50 100 200 400 VF - - IR - - - - 1 50 - - 1.6 2 - - - - - - - - V V A Pulse generator: tp = 5 s, D = 0.05 tr = 0.6 ns, Rj = 50 Oscillograph: R = 50 tr = 0.35 ns C 1 pF 1) Pulse test: tp 300 s, D = 2 %. Semiconductor Group 2 BAW 79 A ... BAW 79 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 C Peak forward current IFM = f (t) TA = 25 C Reverse current IR = f (TA) VR = VRmax Semiconductor Group 3 |
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