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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF140/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode
Designed primarily for linear large-signal output stages up to 150 MHz frequency range. * Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40% (Typ) * Superior High Order IMD * IMD(d3) (150 W PEP) -- - 30 dB (Typ) * IMD(d11) (150 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
MRF140
150 W, to 150 MHz N-CHANNEL MOS LINEAR RF POWER FET
D
G S CASE 211-11, STYLE 2
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 40 16 300 1.7 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 8
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF140 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 5.0 1.0 Vdc mAdc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 10 Adc) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 0.1 4.0 3.0 0.9 7.0 5.0 1.5 -- Vdc Vdc mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 450 400 75 -- -- -- pF pF pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain (VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) (30 MHz) (150 MHz) Gps -- -- -- 15 6.0 40 -- -- -- dB %
Drain Efficiency (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 6.5 A) Intermodulation Distortion (1) (VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
dB IMD(d3) IMD(d11) No Degradation in Output Power -- -- - 30 - 60 -- --
NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
+ BIAS 0 - 12 V-
L1 C11 R4 C5 C6 C7 C8 L2 C9
+ -
C10
+ 28 V - RF OUTPUT
R1 R3 T1 C2 R2
C4 DUT
T2
RF INPUT
C3 C12
C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- Arco 469 C4 -- 820 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 -- 10 F/100 V Electrolytic C11 -- 1 F, 50 V, Tantalum C12 -- 330 pF, Dipped Mica (Short leads)
L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 1.0 /1.0 W Carbon or Parallel Two 2 , 1/2 W Resistors R4 -- 1 k/1/2 W Carbon T1 -- 16:1 Broadband Transformer T2 -- 1:25 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF140 2
MOTOROLA RF DEVICE DATA
25 Pout , OUTPUT POWER (WATTS)
20 POWER GAIN (dB)
120 80 40 0 200 160 120 80 40 0 0 10 VDD = 28 V, IDQ = 250 mA 20
15
30
10 VDD = 28 V IDQ = 250mA Pout = 150 W (PEP)
5
0
2
5
10
20
50
100
200
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
IMD, INTERMODULATION DISTORTION (dB)
- 25 150 MHz - 30 - 35 - 40 - 45 VDD = 28 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz - 30 - 35 - 40 - 45 - 50 0 20 40 60 80 100 120 d5 140 30 MHz d3 d3
1000 f T, UNITY GAIN FREQUENCY (MHz)
800 VDS = 20 V 600
d5
400
10 V
200
160
0
0
5
10 ID, DRAIN CURRENT (AMPS)
15
20
Pout, OUTPUT POWER (WATTS PEP)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency versus Drain Current
10 I DS, DRAIN CURRENT (AMPS)
8 VDS = 10 V gfs = 6 mhos 6
4
2
0
0
2 4 6 8 VGS, GATE-SOURCE VOLTAGE (VOLTS)
10
Figure 6. Gate Voltage versus Drain Current
MOTOROLA RF DEVICE DATA
MRF140 3
30 MHz
150 MHz
200 160
150 Zin 50 30 30 7.0 f = 2.0 MHz 150 ZOL*
Zo = 10 Ohms 7.0 VDD = 28 V IDQ = 250 mA Pout = 150 W PEP ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.
f = 2.0 MHz
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
RFC1 + 28 V + BIAS 0 - 12 V R1 + C4 C5 DUT RFC1 C1 RF INPUT C6 C2 C3 R2 C7 D1 C8 L1 L3 L2 C9 RF OUTPUT L4 C10 - C11
C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 15 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 35 WV Electrolytic
L1 -- 3/4, #18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 7/8, #16 AWG into Hairpin L4 -- 2 Turns, #16 AWG, 5/16 ID RFC1 -- 5.6 H, Molded Choke RFC2 -- VK200-4B R1, R2 -- 150 , 1.0 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
MRF140 4
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended.
DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) ID
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = IC
MOTOROLA RF DEVICE DATA
MRF140 5
PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
STYLE 2: PIN 1. 2. 3. 4.
SOURCE GATE SOURCE DRAIN
CASE 211-11 ISSUE N
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MRF140 6
MRF140/D MOTOROLA RF DEVICE DATA

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