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| (R) LDP24A TRANSIENT PROTECTION LOAD DUMP FEATURES n n TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP PROTECTION COMPLIANT WITH MAIN STANDARDS SUCH AS: ISO / DTR 7637 DESCRIPTION Transient voltage suppressor diodes especially useful in protecting integrated circuits, MOS, hybrids and other overvoltages sensitive semiconductors and components. AG (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VPP P IFSM Tstg Tj TL Parameter Peak pulse load dump overvoltage See note 1 Power dissipation on infinite heatsink Non repetitive surge peak forward current. Storage temperature range. Maximum operating temperature Maximum lead temperature for soldering during 10 sec at 4 mm from case. Tamb = 85C Tamb = 100C Tj initial = 25C tp = 10 ms Value 100 5 500 - 65 to + 175 175 230 Unit V W A C C C THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction ambient thermal resistance on infinite heatsink Llead = 10 mm Value 15 Unit C/W Note 1: For surges greater than the maximum values, the diode will present a short-circuit Anode - Cathode. April 2000 - Ed: 4B 1/5 LDP24A ELECTRICAL CHARACTERISTICS Symbol VRM VBR VCL IPP Parameter Stand-off voltage. Breakdown voltage. Clamping voltage. Peak pulse current. Temperature coefficient of VBR. Capacitance Leakage current at VRM Peak forward voltage drop (IFM = 10A) VF = 0.9 Volt Typ. I IF VCL VBR V RM VF I RM V T C IRM VF I PP Symbol Ipp IRM VBR VCL T C F = 1MHz Pulse duration: 300ms TL = 25C TL = 85C TL = 25C TL = 85C Test Conditions Min. Typ. Max. 30 50 300 Unit A A A V V 10 /C pF -4 VRM = 24 V VRM = 24 V IR = 1mA see table1 25 32 40 10 VR = 0V 8000 LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637. Table 1 Open circuit (voltage curve) (Pulse test n5) Impulse Vs (V) Vbat (V) Ri () t (ms) tr (ms) Number 60s between each pulse N5 86.5 13.5 2 200 (*) <10 5 U(V) 90% Vs 10% Vbat 0 t tr offset 10% / 13.5V t (*) Generator setting 2/5 LDP24A Fig. 1: Peak pulse power versus exponential pulse duration (Tj initial=85C). Fig. 2 : Peak pulse current versus exponential pulse duration (Tj initial=85C). Ppp(kW) 10.0 5.0 100 200 Ipp(A) 2.0 1.0 0.5 20 50 0.2 0.1 1 2 5 tp(ms) 10 20 50 100 10 1 2 5 tp(ms) 10 20 50 100 Fig. 3: Relative variation of peak pulse power versus junction temperature. Fig. 4: Continous power dissipation versus ambient temperature. P(W) 6 5 4 3 2 Rth(j-a)=50C/W Rth(j-a)=Rth(j-l) Ppp[Tj] / Ppp [Tj initial=85C] 1.2 1.0 0.8 0.6 0.4 0.2 Tj (C) 0.0 0 25 50 75 100 125 150 175 200 1 Tamb(C) 0 0 25 50 75 100 125 150 175 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board FR4, e(Cu)=35m, SCu=1cm2). Fig. 6 : Peak forward voltage drop versus peak forward current (typical values). Zth(j-a)(C/W) 100.0 Lleads=10mm IFM(A) 200 100 10.0 Tj=125C 10 1.0 tp(s) 0.1 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Tj=25C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/5 LDP24A Fig. 7: Non repetitive surge peak forward current versus sinusoidal pulse duration and corresponding value of I2t. Fig. 8: Junction capacitance versus reverse applied voltage. IFSM(A) , It(As) 5000 2000 1000 500 200 tp(ms) 100 10 20 50 100 IFSM Tj initial=25C It C(nF) 10 F=1MHz Vosc=30mV 5 2 VR(V) 1 1 2 5 10 20 50 ORDER CODE LDP 24 A Load Dump Protection AG Case Stand Off Voltage 4/5 LDP24A PACKAGE MECHANICAL DATA AG (Plastic) B note 1 L1 A L1 B note 1 / OC OD / note 2 / OD DIMENSIONS REF. A B C D L1 1.35 20 8 1.45 1.27 0.053 Millimeters Min. Max. 9 Inches Min. 0.787 0.315 0.057 0.050 NOTES 1- The lead is not controlled within zone L1. 2- The minimum axial length within which the device may be placed bent at right angles is 0.79" (20 mm). Max. 0.354 Type LDP24A LDP24ARL n Marking LDP24A LDP24A Package AG AG Weight 2.16g 2.16g Base qty 100 1000 Delivery mode Ammopack Tape & Reel Resin meets UL94-V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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