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| PD - 94976 SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) IRF730APBF HEXFET(R) Power MOSFET VDSS 400V Rds(on) max 1.0 ID 5.5A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 22 74 0.6 30 4.6 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). 1 02/03/04 www.irf.com IRF730APBF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 400 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- V(BR)DSS Typ. --- 0.5 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.0 VGS = 10V, ID = 3.3A 4.5 V VDS = VGS, ID = 250A 25 VDS = 400V, VGS = 0V A 250 VDS = 320V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.3A 22 ID = 3.5A 5.8 nC VDS = 320V 9.3 VGS = 10V, See Fig. 6 and 13 --- VDD = 200V --- ID = 3.5A ns --- RG = 12 --- R D = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 320V, = 1.0MHz --- VGS = 0V, VDS = 0V to 320V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 10 22 20 16 600 103 4.0 890 30 45 Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 290 5.5 7.4 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. --- 0.50 --- Max. 1.70 --- 62 Units C/W 62 Diode Characteristics Min. Typ. Max. Units IS I SM VSD t rr Q rr ton Conditions D MOSFET symbol --- --- 5.5 showing the A G integral reverse --- --- 22 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 5.5A, VGS = 0V --- 370 550 ns TJ = 25C, IF = 3.5A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF730APBF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 1 4.5V 0.1 0.1 4.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 VDS , Drain-to-Source Voltage (V) 0.01 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 5.9A ID = 5.5 I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C 1.5 1 TJ = 25 C 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF730APBF 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 20 ID =5.5 5.9A VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance(pF) 16 VDS = 320V VDS = 200V VDS = 80V 1000 Ciss Coss 12 100 8 10 Crss 1 1 10 100 1000 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 TJ = 150 C I D , Drain Current (A) 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF730APBF 6.0 V DS V GS RG RD 5.0 D.U.T. + ID , Drain Current (A) 4.0 -V DD 10V 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF730APBF EAS , Single Pulse Avalanche Energy (mJ) 15V 700 600 500 400 300 200 100 0 TOP BOTTOM VDS L DRIVER ID 2.5A 3.5A 5.5A RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 25 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD 610 600 590 580 570 560 550 540 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS V DSav , Avalanche Voltage ( V ) VG IG ID 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d.IAV , Avalanche Current ( A) Voltage Typical Drain-to-Source Vs. Avalanche Current 6 www.irf.com IRF730APBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF730APBF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IG B T s , C o P A C K 1 - GATE 1- GATE 1 - G A T2 - DRAIN E 2 - D R A3 N SOURCE 2 - C O L L E C T O R I3 - E M IT T E R 3 - S O U4R C E - DRAIN L E A D A S S IG N M E N T S HEXFET 14.09 (.555) 13.47 (.530) 4 - D R A IN 4.06 (.160) 3.55 (.140) 4- C O LLE C TO R 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAM PL E : TH LO AS IN IS I S A N IR F 1 0 1 0 T COD E 1789 S E M B LE D O N W W 19, 1997 T H E A S S E M B L Y L IN E "C " N o t e : " P " i n a s s e m b l y li n e p o s i t i o n in d ic a t e s " L e a d - F r e e " IN T E R N A T I O N A L R E C T I F IE R LOGO AS S EMB LY LOT CODE P AR T N U M B E R D AT E COD E YE AR 7 = 1997 W E E K 19 L IN E C Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 19mH max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS RG = 25, IAS = 5.5A. (See Figure 12) TJ 150C ISD 5.5A, di/dt 90A/s, VDD V(BR)DSS, Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 8 www.irf.com |
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