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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY925 UHF amplifier module Product specification Supersedes data of 1999 Dec 01 2000 Feb 02 Philips Semiconductors Product specification UHF amplifier module FEATURES * 26 V nominal supply voltage * 23 W output power into a load of 50 with an RF drive power of 36 mW. APPLICATIONS * Base station transmitting equipment operating in the 920 to 960 MHz frequency range. DESCRIPTION The BGY925 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOSFET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry. handbook, halfpage BGY925 PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION 1 2 3 4 MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 C. MODE OF OPERATION CW Note 1. At PL = 16 W. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting-base temperature PARAMETER - - - - -30 -10 MIN. 28 28 80 32 +100 +90 MAX. V V mW W C C UNIT f (MHz) 920 to 960 VS1, VS2 (V) 26 PL (W) 23 Gp (dB) 28 (%) (note 1) 30 ZS, ZL () 50 2000 Feb 02 2 Philips Semiconductors Product specification UHF amplifier module CHARACTERISTICS ZS = ZL = 50 ; PL = 23 W; VS1 = VS2 = 26 V; Tmb = 25 C; unless otherwise specified. SYMBOL f IS1 IS2 PL Gp H2 H3 VSWRin PARAMETER frequency range supply current supply current load power power gain efficiency second harmonic third harmonic input VSWR stability reverse intermodulation direct intermodulation NF B noise figure AM bandwidth ruggedness corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR 5 : 1 through all phases; VS2 = 26 V; PL = 23 W 2 - VSWR 3 : 1 through all phases; VS2 = 26 to 27 V; PL = 23 W Pcarrier = 16 W; Pinterference = 1.6 W; fi = fc 600 kHz Pcarrier = 16 W; Pinterference = 1.6 mW; fi = fc + 270 kHz 160 mW PL < 2 W 2 W PL 23 W PL = 16 W PL = 16 W PL = 16 W PD < -60 dBm CONDITIONS - - 23 28 28 30 - - - - - - MIN. 920 - 50 500 - 30 30 - - - - - -80 -55 TYP. BGY925 MAX. 960 - - - 34 32 - -35 -40 2:1 -60 - - 8 - UNIT MHz mA mA W dB dB % dBc dBc dBc dBc dBc dBc MHz no degradation 2000 Feb 02 3 Philips Semiconductors Product specification UHF amplifier module BGY925 handbook, halfpage 35 MCD830 handbook, halfpage 60 MCD831 Gp (dB) 30 920 MHz (%) 40 920 MHz 940 MHz 960 MHz 940 MHz 960 MHz 25 20 20 0 10 20 PL (W) 30 0 0 10 20 PL (W) 30 ZS = ZL = 50 ; VS1 = VS2 = 26 V; Tmb = 25 C. ZS = ZL = 50 ; VS1 = VS2 = 26 V; Tmb = 25 C. Fig.2 Power gain as a function of load power; typical values. Fig.3 Efficiency as a function of load power; typical values. handbook, halfpage 35 MCD832 handbook, halfpage 3 MCD833 Gp (dB) 30 940 MHz 960 MHz IS2 (A) 2 920 MHz 25 1 20 10-4 10-2 1 PL (W) 102 0 10-4 10-2 1 102 PL (W) ZS = ZL = 50 ; VS1 = VS2 = 26 V; Tmb = 25 C. ZS = ZL = 50 ; VS1 = VS2 = 26 V; Tmb = 25 C; f = 920 to 960 MHz. Fig.4 Power gain as a function of load power; typical values. Fig.5 Supply current as a function of load power; typical values. 2000 Feb 02 4 Philips Semiconductors Product specification UHF amplifier module BGY925 handbook, halfpage 35 MCD834 handbook, halfpage 0 MCD835 Gp (dB) 30 Return Losses (dB) -4 -8 -12 25 -16 20 800 900 1000 f (MHz) 1100 -20 800 900 1000 f (MHz) 1100 ZS = ZL = 50 ; PD = -30 dBm; VS1 = VS2 = 26 V; Tmb = 25 C. ZS = ZL = 50 ; PD = -30 dBm; VS1 = VS2 = 26 V; Tmb = 25 C. Fig.6 Small signal in band power gain as a function of frequency; typical values. Fig.7 Small signal in band input return losses as a function of frequency; typical values. handbook, halfpage G 40 MCD836 p (dB) 20 handbook, halfpage 34 MCD837 Gp (dB) 32 0 30 -20 28 -40 (7) (6) (4) (5) (2) (3) (1) -60 26 -80 24 0 500 1000 f (MHz) 1500 0 10 20 30 ZS = ZL = 50 ; VS1 = VS2 = 26 V; Tmb = 25 C. (1) Tamb = -33C. (2) Tamb = -20C. (5) Tamb = 50C. (6) Tamb = 75C. (7) Tamb = 100C. PL (W) 40 ZS = ZL = 50 ; VS1 = VS2 = 26 V; PD = -30 dBm; Tmb = 25 C. (3) Tamb = 3C. (4) Tamb = 25C. Fig.8 Small signal out band power gain as a function of frequency; typical values. Fig.9 Power gain as a function of load power; typical values 2000 Feb 02 5 Philips Semiconductors Product specification UHF amplifier module BGY925 handbook, halfpage 50 MCD838 handbook, halfpage 0.5 MCD839 IS2 (A) 0.4 (%) 40 30 0.3 20 0.2 10 0.1 0 -50 0 50 Tamb (C) 100 0 -50 0 50 Tamb (C) 100 ZS = ZL = 50 ; PL = 16 W; VS1 = VS2 = 26 V. ZS = ZL = 50 ; VS1 = VS2 = 26 V; PD = 0. Fig.10 Efficiency as a function of ambient temperature; typical values. Fig.11 Quiescent current as a function of ambient temperature; typical values. handbook, halfpage 40 MCD840 handbook, halfpage 34 MCD841 PL(-1db) (W) 30 Gp (dB) 32 30 20 28 10 26 0 -50 0 50 Tamb (C) 100 24 -50 0 50 Tamb (C) 100 ZS = ZL = 50 ; Pref = 5 W; VS1 = VS2 = 26 V. ZS = ZL = 50 ; PL = 5 W; VS1 = VS2 = 26 V. Fig.12 Load power at -1 dB gain as a function of ambient temperature; typical values. Fig.13 Power gain as a function of ambient temperature; typical values. 2000 Feb 02 6 Philips Semiconductors Product specification UHF amplifier module BGY925 handbook, halfpage pin numbers 1 C3 2 C4 3 4 Z1 R1 L1 R2 L2 Z2 RF input C1 Vs1 C2 Vs2 RF output MGL161 Fig.14 Test circuit. 2000 Feb 02 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 2000 Feb 02 8 1 4 C3 C4 L1 R1 C1 handbook, full pagewidth Philips Semiconductors UHF amplifier module 90 L2 R2 C2 Product specification 2 3 MGL162 BGY925 Dimensions in mm. Fig.15 Printed-circuit board component layout. Philips Semiconductors Product specification UHF amplifier module List of components (See Figs 14 and 15) COMPONENT C1, C2 C3, C4 L1, L2 R1, R2 Z1, Z2 Note DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor Grade 4S2 Ferroxcube bead metal film resistor stripline; note 1 10 ; 0.4 W 50 VALUE 10 F; 35 V 100 nF; 50 V BGY925 CATALOGUE NO. 4330 030 36300 2322 195 13109 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (r = 4.5); thickness = 1 mm. MOUNTING RECOMMENDATIONS To ensure a good thermal contact and to prevent mechanical stress when bolted down, the flatness of the mounting base is designed to be typically better than 0.1 mm. The mounting area of the heatsink should be flat and free from burrs and loose particles. The heatsink should be rigid and not prone to bowing under thermal cycling conditions. The thickness of a solid heatsink should be not less than 5 mm to ensure a rigid assembly. A thin, even layer of thermal compound should be applied between the mounting base and the heatsink to achieve the best possible thermal contact resistance. Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting-base; too little will also result in poor thermal conduction. The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be tightened to "finger tight" and then further tightened in alternating steps to a maximum torque of 0.4 to 0.6 Nm. Once mounted on the heatsink, the module leads can be soldered to the printed-circuit board. A soldering iron may be used up to a temperature of 250 C for a maximum of 10 seconds at a distance of 2 mm from the plastic cap. ESD precautions must be taken to protect the device from electrostatic damage. 2000 Feb 02 9 Philips Semiconductors Product specification UHF amplifier module PACKAGE OUTLINE BGY925 Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 4 in-line leads SOT365A D A F y U q A U2 E p U1 L 1 2 bp 3 4 wM vA Q c e e1 e Z 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 9.5 9.0 bp 0.56 0.46 c 0.3 0.2 D 30.1 29.9 E 18.6 18.4 e e1 F 3.25 3.15 L 6.5 6.1 p 4.1 3.9 Q 4.0 3.8 q U U1 15.4 15.2 U2 7.75 7.55 v 0.3 w 0.25 y 0.1 Z 12.8 12.6 2.54 17.78 40.74 48.0 40.54 48.4 OUTLINE VERSION SOT365A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-06 2000 Feb 02 10 Philips Semiconductors Product specification UHF amplifier module DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BGY925 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 02 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 69 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603516/04/pp12 Date of release: 2000 Feb 02 Document order number: 9397 750 06749 |
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