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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-90 Schottky barrier rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier rectifier diode FEATURES * Low switching losses * High breakdown voltage * Capability of absorbing very high surge current * Fast recovery time * Guard ring protected * Plastic SMD package. k a BYG90-90 DESCRIPTION The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier handbook, 4 columns APPLICATIONS * Low power switched-mode power supplies * Rectifying * Polarity protection. Top view MAM129 - 1 Fig.1 Simplified outline (SOD106A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRRM VRWM IF(AV) PARAMETER continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 100 C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method tp = 100 s - CONDITIONS MIN. MAX. 90 90 90 1 V V V A UNIT IFSM IRSM Tstg Tj Notes non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature - - -65 - 30 0.5 +150 150 A A C C 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier rectifier diode ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2; note 1 IF = 0.06 A IF = 1 A IF = 1 A; Tj = 100 C IR reverse current VR = VRRMmax; note 1; see Fig.3 VR = VRRMmax; Tj = 100 C; note 1; see Fig.3 Cd Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD106A standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 - - - - - - - - - - - - MIN. TYP. BYG90-90 MAX. 360 790 690 0.5 5 100 UNIT mV mV mV mA mA pF VALUE 80 UNIT K/W 1996 May 13 3 Philips Semiconductors Product specification Schottky barrier rectifier diode GRAPHICAL DATA 10 4 handbook, halfpage IF (mA) 10 3 10 3 10 2 (1) (2) (3) (4) (5) MLC497 BYG90-90 10 5 handbook, halfpage IR (A) 10 4 (1) (2) (3) (4) 10 2 MLC498 10 10 (5) 1 0 (1) (2) (3) (4) (5) Tamb = 150 C. Tamb = 125 C. Tamb = 100 C. Tamb = 85 C. Tamb = 25 C. 0.4 0.8 1.2 V (V) 1.6 F 1 0 20 40 60 80 100 VR (V) (1) Tamb = 150 C. (2) Tamb = 125 C. (3) Tamb = 100 C. (4) Tamb = 85 C. (5) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. 10 3 handbook, halfpage Cd (pF) MLC499 10 2 10 0 50 VR (V) 100 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 May 13 4 Philips Semiconductors Product specification Schottky barrier rectifier diode PACKAGE OUTLINE BYG90-90 handbook, full pagewidth 5.5 5.1 4.57 max 2.65 max 0.1 0.2 1.5 1.2 MSA356 - 1 cathode identifier 2.5 1.5 Dimensions in mm. The marking bar indicates the cathode. Fig.5 SOD106A. 1996 May 13 5 Philips Semiconductors Product specification Schottky barrier rectifier diode DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BYG90-90 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 13 6 |
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