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| BB 535 Silicon Variable Capacitance Diode * For UHF and TV/TR tuners * Large capacitance ratio, low series resistance Type BB 535 Marking Ordering Code white S Q62702-B580 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k) Forward current Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 30 35 20 - 55 ... + 125 - 55 ... + 150 mA C Unit V VR VRM IF Top Tstg RthJA 450 K/W Semiconductor Group 1 Jan-08-1997 BB 535 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 30 V, TA = 25 C VR = 30 V, TA = 85 C AC characteristics Diode capacitance CT 17.5 14.01 2.05 1.9 18.7 15 2.24 2.1 6.7 8.9 0.55 2 20 16.1 2.4 2.3 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/CT25 6 7.5 9.8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/CT28 8.2 CT/CT 2.5 0.65 nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 ... 28 V, f = 1 MHz Series resistance rs Ls VR = 3 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-08-1997 BB 535 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 1/C 20 pF CT 16 14 12 10 8 6 4 2 0 0 5 10 15 20 V 30 TCc 10 -2 10 -3 10 -4 10 -5 0 10 10 1 V VR VR Normalized diode capacitance Reverse current IR = f (TA) VR = 28V C(TA) / C(25C)= f (TA) f = 1MHz, VR= Parameter 1.06 10 3 pA CTA/C25 1V IR 10 2 1.02 2V 25V 1.00 10 1 0.98 0.96 -30 -10 10 30 50 70 C TA 110 10 0 -10 10 30 50 70 C TA 100 Semiconductor Group 3 Jan-08-1997 BB 535 Reverse current IR = f (VR) TA = Parameter 10 3 pA 85C IR 10 2 25C 10 1 10 0 10 -1 0 10 10 1 V VR Semiconductor Group 4 Jan-08-1997 |
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