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| SI9436DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V ID (A) 6.8 5.6 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 6.8 5.5 40 2.5 3.0 1.9 Steady State Unit V 4.7 3.7 A 1.2 1.4 0.9 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71257 S-01831--Rev. B, 21-Aug-00 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 73 16 Maximum 42 90 20 Unit _C/W 1 SI9436DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 6.8 A VGS = 4.5 V, ID = 5.6 A VDS = 15 V, ID = 6.8 A IS = 2.5 A, VGS = 0 V 40 0.030 0.044 12 0.75 1.2 0.040 0.060 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.5 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 15 V, VGS = 10 V ID = 6.8 A V V, 68 14 1.9 3.5 11 9 25 10 60 20 20 50 20 100 ns 30 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 40 Transfer Characteristics TC = -55_C 32 I D - Drain Current (A) VGS = 10 thru 5 V I D - Drain Current (A) 4V 32 25_C 24 24 125_C 16 16 8 3V 8 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71257 S-01831--Rev. B, 21-Aug-00 SI9436DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 1400 1200 0.08 C - Capacitance (pF) 1000 800 600 400 200 0 0 8 16 24 32 40 0 0 5 10 15 20 25 30 Coss Vishay Siliconix Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V Ciss 0.02 Crss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.8 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 15 1.2 4 1.0 2 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 0.08 ID = 6.8 A 0.06 10 TJ = 25_C 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71257 S-01831--Rev. B, 21-Aug-00 www.vishay.com 3 SI9436DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 A -0.0 Power (W) 40 30 -0.2 20 -0.4 10 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 73_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71257 S-01831--Rev. B, 21-Aug-00 |
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