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SI9426DY
January 2001
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint package.
Features
* 10.5 A, 20 V. RDS(ON) = 13.5 m @ VGS = 4.5 V RDS(ON) = 16 m @ VGS = 2.7 V
* *
High cell density for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package
Applications
* * DC/DC converter Load switch
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 8
(Note 1a)
Units
V V A W
10.5 30 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
C/W C/W
Package Marking and Ordering Information
Device Marking 9426 Device SI9426DY Reel Size 13'' Tape width 12mm Quantity 2500 units
SI9426DY Rev A (W)
2001 Fairchild Semiconductor International
SI9426DY
Electrical Characteristics
Symbol
BVDSS IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250A VGS = 0 V VDS = 16 V, VDS = 16 V, VGS = 0 V, TJ=55C VGS = 8 V, VDS = 0 V VGS = -8 V VDS = 0 V
Min
20
Typ
Max Units
V 1 10 100 -100 A nA nA
Off Characteristics
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A,TJ=125C VGS = 4.5 V, ID = 10.5 A VGS = 4.5 V,ID = 10.5 A,TJ=125C VGS=2.7 V, ID = 10 A VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 10.5 A
0.4 0.3
0.6 0.5 12 17 14 43
1.5 0.8 13.5 24 16
V m
ID(on) gFS
30
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
2150 890 165
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 5 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
11 26 145 40
30 55 220 100 60
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 10.5 A,
43 7 8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
2.1 0.6 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when 2 mounted on a 1 in pad of 2 oz copper
b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
SI9426DY Rev A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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