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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTQ 64N25P IXTT 64N25P
VDSS ID25
RDS(on)
= 250 V = 64 A = 48 m
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M
Maximum Ratings 250 250 20 V V V A A A mJ J V/ns W C C C C
TO-3P (IXTQ)
TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150
G
D
S
(TAB)
TO-268 (IXTT)
G G = Gate S = Source
S D = Drain TAB = Drain
D (TAB)
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages
1.13/10 Nm/lb.in. 5.5 5.0 g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 100 25 250 48 V V nA A A m
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99120A(02/04)
(c) 2004 IXYS All rights reserved
IXTQ 64N25P IXTT 64N25P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 22 30 3450 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 155 21 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 23 60 20 105 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 53 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W (TO-3P) 0.21 K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 64 160 1.5 200 3.0 A A V ns C TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P IXTT 64N25P
Fig. 1. Output Characteristics @ 25C
64 56 48 VGS = 10V 9V 8V 180 160 140 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
40 32 24 16 8 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V
120 100 80 60 40 6V 5V 0 2 4 6 8 10 12 14 16 18 20 8V 7V
5V
20 0
V D S - Volts Fig. 3. Output Characteristics @ 125C
64 56 48 VGS = 10V 9V 8V 7V 2.8 2.5 VGS = 10V
V D S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 64A I D = 32A
I D - Amperes
40 32 24 16
6V
5V 8 0 0 1 2 3 4 5 6 7 8
V D S - Volts Fig. 5. RDS(on) Norm alize d to
3.7 3.4
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
0.5 ID25 Value vs. ID
VGS = 10V TJ = 125C
70 60 50
R D S ( o n ) - Normalized
3.1 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 30 60
I D - Amperes
TJ = 25C
40 30 20 10 0
I D - Amperes
90
120
150
180
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXTQ 64N25P IXTT 64N25P
Fig. 7. Input Adm ittance
120 105 90 75 60 45 30 15 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125C 25C -40C 60
Fig. 8. Transconductance
50
TJ = -40C 25C 125C
g f s - Siemens
I D - Amperes
40
30 20
10
0 0 15 30 45 60 75 90 105 120 135
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
180 10 9 150 8 7 VDS = 125V I D = 32A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
120
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4
6 5 4 3 2 1
90 60
30
0
0
V S D - Volts
0
10
20
30
40
50
60
70
80
90 100 110
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 150C C iss R DS(on) Limit TC = 25C
Fig. 11. Capacitance
10000 f = 1MHz
Capacitance - picoFarads
I D - Amperes
100 25s 1ms 10ms 10 DC 100s
1000
C oss
C rss 100 0 5 10 15 1
V D S - Volts
20
25
30
35
40
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P IXTT 64N25P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1.00
R( t h ) J C - C / W
0.10
0.01 1 10 100 1000
Puls e W idth - millis ec onds
(c) 2004 IXYS All rights reserved

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