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| Silicon Junction FETs (Small Signal) 2SK65 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q Diode is connected between gate and source q Low noise voltage unit: mm 4.50.1 2.00.2 1.0 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12 -12 2 2 2 20 -10 to +70 -20 to +150 Unit V V mA mA mA mW C C 1 0.450.05 2.54 2 3 0.80.1 10.50.5 4.00.2 s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Mutual conductance Symbol IDSS* gm NV Conditions VDS = 4.5V, VGS = 0, RS = 2.2k 1% VDS = 4.5V, VGS = 0 RS = 2.2k 1%, f = 1kHz VDS = 4.5V, RS = 2.2k 1% CG = 10pF, A-curve VDS = 4.5V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 12V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz VDS = 1V, RS = 2.2k 1% CG = 10pF, eG = 100mV, f = 70Hz -10 -9.5 -11 min 0.04 300 500 typ max 0.8 Unit mA S V Noise figure 4 GV1* Voltage gain GV2* GV3* 0.7 1: Drain 2: Gate 3: Source S Type Package dB dB dB * IDSS rank classification and GV value Runk IDSS (mA) GV1 (dB) GV2 (dB) | GV1 - GV2 | (dB) P 0.04 to 0.2 > -13 > -12 <3 Q 0.15 to 0.8 > -12 > -11 <3 1 Silicon Junction FETs (Small Signal) PD Ta 24 800 Ta=25C 700 20 VGS=0V 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 - 0.1V - 0.2V - 0.3V - 0.4V - 0.5V - 0.6V - 0.7V 10 12 1.0 2SK65 ID VDS 1.2 VDS=4.5V ID VGS Allowable power dissipation PD (mW) 16 Drain current ID (mA) Drain current ID (A) 600 0.8 12 0.6 Ta=-25C 0.4 25C 8 Topr max. 75C 0.2 4 0 0 -2.0 -1.6 -1.2 - 0.8 - 0.4 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) gm VGS 1.2 VDS=4.5V f=1kHz Ta=25C 1.2 IDSS=0.9mA VDS=4.5V f=1kHz Ta=25C g m ID 24 IDSS=0.9mA 20 NF ID VDS=4.5V Rg=100kW Ta=25C Mutual conductance gm (mS) 1.0 Mutual conductance gm (mS) 1.0 0.3mA 0.8 0.1mA 0.6 0.8 Noise figure NF (dB) 16 f=100Hz 12 1kHz 8 10kHz 0.6 0.3mA 0.4 0.1mA 0.4 0.2 0.2 4 0 -1.0 0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.2 0.4 0.6 0.8 1.0 Gate to source voltage VGS (V) Drain current ID (mA) Drain current ID (mA) NF Rg 24 VDS=4.5V ID=300A Ta=25C 16 14 NF f VDS=4.5V ID=300A Ta=25C 20 Noise figure NF (dB) f=100Hz 16 1kHz 12 Noise figure NF (dB) 12 10 8 Rg=10k 6 4 2 1000k 100k 10kHz 8 4 0 0.1 0.3 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 3 10 Signal source resistance Rg (k) Frequency f (KHz) 2 |
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