 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-F-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.) High forward transfer admittance: iYfsi = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 20 -16 -64 75 292 -16 7.5 150 -55 to150 Unit V V V A JEDEC W mJ A mJ C C SC-97 2-9F1B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.74 g (typ.) Circuit Configuration 4 Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.67 Unit C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 1.84 mH, RG = 25 W, IAR = -16 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-08-09 2SJ619 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -6 A VGS = -10 V, ID = -6 A VDS = -10 V, ID = -6 A 4.5 3/4 3/4 3/4 3/4 VOUT 3/4 50 9 RL = 6.25 W 3/4 Duty < 1%, tw = 10 ms = VDD ~ -50 V 3/4 3/4 VDD ~ -80 V, VGS = -10 V, ID = -16 A 3/4 3/4 65 48 29 19 3/4 3/4 3/4 3/4 nC 18 3/4 30 3/4 ns Min 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 0.25 0.15 7.7 1100 210 440 18 Max 10 Unit mA mA V V W S -100 3/4 -100 -0.8 3/4 -2.0 0.32 0.21 3/4 3/4 3/4 3/4 3/4 pF Turn-ON time Switching time Fall time ton 0V VGS -10 V ID = -8 A tf Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = -16 A, VGS = 0 V IDR = -16 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 160 0.5 Max -16 -64 1.7 3/4 3/4 Unit A A V ms mC Marking Lot Number J619 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-09 2SJ619 ID - VDS -5 Common source Tc = 25C pulse test -8 -3 -2.5 -20 -10 -6 -4 -3 -16 -8 -10 ID - VDS Common source Tc = 25C pulse test -4 -4 -6 (A) ID ID Drain current (A) -12 Drain current -3.5 -8 -3 -4 -2.5 VGS = -2 V -2 -1 VGS = -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -2 -4 -6 -8 -10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source VDS = -10 V pulse test -3.2 VDS - VGS Common source Tc = 25C pulse test -8 (A) 25 -6 VDS Drain-source voltage (V) -2.4 -1.6 Drain current ID -4 ID = -8 A -2 100 Tc = -55C 0 0 -1 -2 -3 -4 -5 -6 -0.8 -4 -2 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 50 RDS (ON) - ID 3.0 Common source Tc = 25C Pulse test (S) Common source 30 VDS = -10 V Pulse test iYfsi Drain-source on resistance 1.0 Forward transfer admittance (9) RDS (ON) 10 25 5 Tc = -55C 0.5 0.3 VGS = -4 V -10 0.1 0.05 100 3 1 -0.3 -1 -3 -10 -30 0.03 -0.1 -0.3 -1 -3 -10 -20 Drain current ID (A) Drain current ID (A) 3 2002-08-09 2SJ619 RDS (ON) - Tc (W) 0.5 -30 Common source pulse test 0.4 -4 0.3 -2 0.2 V GS = -4 V ID = -8 V -8 -2, 4 Common source Tc = 25C pulse test -10 -5 -3 VGS = -10 V -5 -3 IDR - VDS RDS (ON) Drain-source on resistance Drain reverse current IDR (A) -1.0 -0.5 0.1 VGS = -10 V 0 -80 -2 -1 0, 1 0.6 0.8 1.0 -40 0 40 80 120 160 -0.3 0 0.2 0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 -4 Vth - Tc Common source VDS = -10 V ID = -1 mA pulse test (pF) 1000 500 300 Ciss Gate threshold voltage Vth (V) -100 -3 Capacitance C Coss Crss -2 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C -0.3 -1 -3 -10 -30 -1 10 -0.1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 100 -100 Dynamic input/output characteristics Common source ID = -16 A Tc = 25C pulse test VDS -60 VDD = -80 V -40 -20 -20 VGS 0 0 0 100 -4 -40 -8 -12 -20 (W) (V) 80 -80 -16 Drain power dissipation 40 20 0 0 Drain-source voltage 40 80 120 160 200 20 40 60 80 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-09 Gate-source voltage 60 VDS VGS PD (V) 2SJ619 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 m 100 m 1m 10 m 100 m Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.67C/W 1 10 Pulse width tw (S) Safe operating area -1000 500 EAS - Tch (mJ) 100 ms * 400 Avalanche energy EAS -100 ID max (pulsed) * (A) 300 ID max (continuous) -10 DC operation Tc = 25C -1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -1 -10 1 ms * ID Drain current 200 100 -0.1 -0.1 VDSS max -100 -1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = -25 V, L = 1.84 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-09 2SJ619 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-09 |
Price & Availability of 2SJ619
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |