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| 2SJ475-01 FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance P-channel MOS-FET -60V 0,06 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=-1mA VGS=0V ID=-1mA VDS=VGS VDS=-60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=-12,5A VGS=-4V ID=-12,5A VGS=-10V ID=-12,5A VDS=-25V VDS=-25V VGS=0V f=1MHz VCC=-30V ID=-25A VGS=-10V RGS=10 Tch=25C L=100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. -60 -1,0 Typ. -1,5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 -2,0 160 0,9 Max. -2,5 -500 -1,0 100 0,11 0,06 3000 1050 680 25 120 290 140 -3,0 7,5 -25 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 2,50 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com P-channel MOS-FET -60V 0,06 2SJ475-01 FAP-III Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=-12,5A; VGS=10V 25A 50W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=-25V; Tch=25C ID [A] RDS(ON) [] 2 ID [A] 1 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=-25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=-1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=-25A; Tc=25C Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) C [F] VDS [V] 8 VGS [V] IAV [A] 7 9 VDS [V] Qg [nC] starting Tch [C] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch); VCC=-24V; IAV>=-25A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T EAV [mJ] 10 ID [A] 12 Starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! |
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