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| PD - 9.1559A PRELIMINARY l l l l l l IRF9956 HEXFET(R) Power MOSFET 8 Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 8/25/97 IRF9956 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.015 0.06 0.09 --- 12 --- --- --- --- 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.10 VGS = 10V, ID = 2.2A 0.20 VGS = 4.5V, ID = 1.0A --- V VDS = VGS , ID = 250A --- S VDS = 15V, ID = 3.5A 2.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 24V nA -100 VGS = -24V 14 ID = 1.8A 2.0 nC VDS = 10V 3.5 VGS = 10V, See Fig. 10 12 VDD = 10V 18 ID = 1.0A ns 26 RG = 6.0 6.0 RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 1.7 A 16 1.2 53 57 V ns nC --- 0.82 --- 27 --- 28 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, I S = 1.25A, VGS = 0V TJ = 25C, I F = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 22mH RG = 25, IAS = 2.0A. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF9956 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP 100 I D , Dra in-to -S o u rce Cu rre n t (A ) 10 I D , Dra in-to -S o u rce Cu rre n t (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP 10 3.0V 20 s P U LSE W IDTH TJ = 25 C A 0.1 1 10 3 .0V 20 s P U LSE W IDTH TJ = 15 0C A 0.1 1 10 1 1 V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , D r ain- to-S ourc e C urre nt (A ) IS D , R e ve rs e D ra in C u rre n t (A ) 10 10 T J = 2 5 C T J = 1 5 0 C T J = 1 50C T J = 25C 1 1 3.0 3.5 4.0 4.5 VD S = 1 0 V 2 0 s PU L SE W ID TH 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 VG S = 0 V 1.2 A 1.4 V G S , Ga te-to-S o urce V oltage (V ) V S D , S ource-to-Drain Voltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF9956 ID = 2.2A R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 RDS (on) , Drain-to-Source On Resistance () 2.0 0.12 0.10 V G S = 4.5V 1.0 0.08 0.5 V G S = 10V 0.06 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.04 0 2 4 6 8 10 12 A TJ , Junction Temperature ( C) I D , D rain C ur rent (A) Fig 4. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.16 100 RDS (on) , Drain-to-Source On Resistance () TOP 0.14 E A S , Single Pulse Avalanche Energy (mJ) 80 BOTTOM ID 0.89A 1.6A 2.0A 0.12 0.10 60 0.08 I D = 3 .5A 0.06 40 0.04 20 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V G S , G ate -to-S ource V oltage (V) Starting T ,JJunction Temperature (C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF9956 350 VGS , Gate-to-Source Voltage (V) 300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d 20 ID = 1.8A VDS = 10V 16 C , C a p a c ita n c e (p F ) 250 C is s C os s 200 12 150 8 100 C rss 4 50 0 1 10 100 A 0 0 2 4 6 8 10 V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9956 Package Outline SO8 Outline D -B - D IM 5 IN C H E S M IN .0 5 3 2 .0 0 4 0 .0 1 4 .0 0 7 5 .1 8 9 .1 5 0 MAX .0688 .0098 .018 .0 09 8 .1 96 .157 M IL L IM E T E R S M IN 1 .3 5 0 .1 0 0 .3 6 0 .1 9 4 .8 0 3 .8 1 M AX 1 .7 5 0 .2 5 0 .4 6 0 .2 5 4 .9 8 3 .9 9 A 6 5 H 0.25 (.01 0) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0.10 (.0 04) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .0 5 0 B A S IC .0 2 5 B A S IC .2 2 8 4 .0 1 1 0 .1 6 0 .2 44 0 .019 .0 5 0 8 1 .2 7 B A S IC 0 .6 3 5 B A S IC 5 .8 0 0 .2 8 0 .4 1 0 6 .2 0 0 .4 8 1 .2 7 8 -C B 8X 0.25 ( .010) M A1 CASBS L RE CO MM EN DE D F O O T PR INT 0.72 (.028 ) 8X N OT E S : 1. D IME NS IO NING AND T O LE RA NCING PE R A NS I Y 14.5M- 1982. 2. C O NT RO LLING D IME NS IO N : IN CH. 3. D IME NS IO NS A RE S HO W N IN M ILLIME T ER S (INC HE S) . 4. O U TLIN E CO NF O RM S T O JE DE C O U TLINE MS -01 2AA . 5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006). 6 DIM ENS IO NS IS T H E LE NG T H O F LE AD F O R SO LDE RIN G T O A S UB ST RA T E.. 6.46 ( .255 ) 1.78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF9956 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M BE R 1 1 2. 3 ( .48 4 ) 1 1. 7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N N O TE S : 1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R. 2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) . 3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1. 3 30 .00 (12 .9 92 ) MAX. 1 4.4 0 ( .5 66 ) 1 2.4 0 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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