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| IRF9240 IRF9240-SMD MECHANICAL DATA 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) P-CHANNEL POWER MOSFET D 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 G S 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO-3 Package Pin 1 - Gate Pin 2 - Source 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. FEATURES Pin 3 - Drain * P-CHANNEL POWER MOSFET * HIGH VOLTAGE * INTEGRAL PROTECTION DIODE * AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 Pin 1 - Gate Pin 2 - Source Pin 3 - Drain Note: IRFNxxxx also available with pins 1 and 3 reversed. TO-3 -- TO-3 (TO-204AA) Metal Package TO-220 SM -- TO-220 Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS VDGR VGS ID IDM PD ILM Tj Tstg Semelab plc. Drain - Source Voltage Drain - Gate Voltage (RGS = 20KW) Gate - Source Voltage Continuous Drain Current @ Tcase = 25C @ Tcase = 100C Pulsed Drain Current Max. Power Dissipation @ Tcase = 25C Linear Derating Factor (TO 3 package only) Inductive Current , Clamped Operating Junction and (TO 3 package only) Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk -200V -200V 20V -11A -7.0A -44A 125W 1W / C -44A -55 to 150C Prelim. 7/00 IRF9240 IRF9240-SMD ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS VGS(TH) IGSS Characteristic Drain - Source Breakdown Voltage Gate Threshold Voltage Gate - Source Leakage Current (forward) Gate - Source Leakage Current (reverse) Zero Gate Voltage Drain Current Test Conditions VGS = 0V , ID = -250mA VDS = VGS , ID = -250mA VGS = -20V VGS = 20V VDS = Max. Rating , VGS = 0V IDSS VDS = 0.8 x Max. Rating VGS = 0V , Tcase = 125C ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS On State Drain Current 1 Static Drain - Source On-State Resistance Forward Transconductance 1 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Min. (TO-3 package only) (TO-3 package only) (TO-3 package only) Test Conditions Min. 0.1 30 300 Typ. Max. -11 -44 VGS = 0V , IS = - 11A Tcase = 25C IF = -11A , dlF / dt = 100A/ms Tj = 150C IF = -11A , dlF / dt = 100A/ms Tj = 150C 270 2.0 -4.6 VDS > ID(ON) x RDS(ON) Max VGS = -10V VGS = -10V , ID = -6A VDS > ID(ON) x RDS(ON) Max ID = -6A VGS = 0V VDS = -25V f = 1MHz VGS = -15V ID = -22A VDS = 0.8 x Max. Rating VDD = 0.5 x BVDSS ID = -6A ZO = 4.7W 4 -11 0.35 6 1100 375 150 70 55 15 20 10 12 8 5.0 12.5 Typ. 30 15 18 12 nH nH Max. Unit 1.0 C/W C/W C/W C Unit A V ns ns 1300 450 250 90 nC pF 0.5 Min. -200 -2 Typ. Max. -4 -100 100 -250 -1000 Unit V V nA nA mA mA A W S THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqCS RqJA TL Case to Sink Junction to Ambient Max. Lead Temperature 0.063 " from case for 10 sec. SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Continuous Source Current (Body Diode) IS I Pulsed Source Current1 (Body Diode) SM VSD trr Qrr Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge mC 1) Pulse Test: Pulse Width < 300mS , Duty Cycle 2% 2) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
Price & Availability of IRF9240
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