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| PD-94009 IRF7811AV IRF7811AV * * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6.7nC 8.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TL = 90C IDM PD Symbol VDS VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V www.irf.com 1 12/13/00 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 20 100 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - - (off) Min 30 Typ - 11 Max - 14 Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,I D = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS=5V, ID=15A, VDS=24V VGS = 5V, VDS< 100mV VDS = 16V, ID = 15A Current* Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance A nA 100 17 14 3.4 1.6 5.1 6.7 8.1 2.2 8.6 21 43 10 1801 723 46 - - - 12 26 21 nC VDS = 16V, VGS = 0 VDD = 16V, I D = 15A ns VGS = 5V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) 50 Min Typ Max 1.3 Units V nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 15A 43 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, Q G, QSW and QOSS measured at VGS = 5.0V, IF = 15A. 2 www.irf.com IRF7811AV RDS(on) , Drain-to-Source On Resistance 2.0 I D = 15A 6 1.5 VGS , Gate-to-Source Voltage (V) ID = 15A VDS = 16V (Normalized) 4 1.0 2 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 4.5V 120 140 160 0 0 5 10 15 20 T J , Junction Temperature ( C) Q G , Total Gate Charge (nC) Figure 1. Normalized On-Resistance vs. Temperature RDS(on) , Drain-to -Source On Resistance () 0.020 Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge 3000 V GS = 0V, f = 1 MHZ Ciss = C gs + C gd , Cds SHORTED Crss = C gd Coss = C ds + C gd I D = 15A 0.018 2500 C, Capacitance(pF) 0.016 2000 Ciss Coss 0.014 1500 0.012 1000 0.010 500 Crss 0.008 3.0 6.0 9.0 12.0 15.0 0 1 10 100 V GS, Gate -to -Source Voltage (V) V DS , Drain-to-Source Voltage (V) Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 Figure 4. Typical Capacitance vs. Drain-to-Source Voltage 100 I D , Drain-to-Source Current (A) T = 150 C J 10 ISD , Reverse Drain Current (A) T = 150 C J 10 T = 25 C J T = 25 C J 1 1 0.1 2.0 2.5 3.0 3.5 V DS = 15V 20s PULSE WIDTH 4.0 4.5 5.0 0.1 0.3 0.6 0.9 V GS= 0 V 1.2 1.5 V GS, Gate-to-Source Voltage (V) V SD ,Source-to-Drain Voltage (V) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7811AV 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 P DM t1 t2 10 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 50 u 8V 5 uH S c h o t tk y - 6 A VDD 450 125nS R e p e titi o n r a te :1 0 0 H z 50 u 16Vz500m W M ic 4 4 5 2 B M 450 5 0 O h m s p ro b e Vds 90% 10% V gs t d(on) t f(v) t d(off) t r(v) Switching Time Waveforms Figure 8. Clamped Inductive load test diagram and switching waveform 4 www.irf.com IRF7811AV SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 4 5 .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8 -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 5 IRF7811AV SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 6 www.irf.com |
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