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| PD - 50053B GA125TS120U "HALF-BRIDGE" IGBT INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.2V @VGE = 15V, IC = 125A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 125 250 250 250 20 2500 625 325 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.20 0.35 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA125TS120U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 -- -- VGE = 0V, IC = 1mA -- 2.2 3.0 VGE = 15V, IC = 125A -- 2.1 -- V VGE = 15V, IC = 125A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 1.5mA Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 1.5mA Forward Transconductance -- 170 -- S VCE = 25V, IC = 125A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- 10 VGE = 0V, VCE = 1200V, TJ = 125C Diode Forward Voltage - Maximum -- 2.7 4.2 V IF = 125A, VGE = 0V -- 2.6 -- IF = 125A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 989 167 328 186 159 459 404 19 31 49 22258 989 192 181 126 11360 1875 Max. Units Conditions 1484 VCC = 400V 250 nC IC = 148A 492 TJ = 25C -- RG1 = 15, RG2 = 0, -- ns IC = 125A -- VCC = 720V -- VGE = 15V -- mJ Inductor load -- 75 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 125A -- A RG1 = 15 -- nC RG2 = 0 -- A/s VCC = 720V di/dt =1448A/s 2 www.irf.com GA125TS120U 120 For both: 100 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 120 W S q u a re w a v e : 80 60 60 % of ra ted vo ltag e I 40 20 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 125 C 100 TJ = 125 C TJ = 25 C 10 TJ = 25 C 10 1.0 V GE = 15V 80s PULSE WIDTH 1.5 2.0 2.5 3.0 1 4.0 V CE = 25V 80s PULSE WIDTH 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA125TS120U 150 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 250 A Maximum DC Collector Current(A) 125 100 IC = 125 A 2.0 75 IC =62.5 A 50 25 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T he rm a l R es pon se (Zth JC ) D = 0.50 0.1 0.20 0 .1 0 0 .0 5 0.02 0 .0 1 P DM t S IN G LE PU LS E (TH E R M AL RE SP O N SE ) 1 t2 Notes: 1. Duty factor D = t 1 / t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA125TS120U 40000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 125A 16 C, Capacitance (pF) 30000 Cies 12 20000 8 Coes 10000 Cres 4 0 1 10 100 0 0 200 400 600 800 1000 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 80 Total Switching Losses (mJ) 70 Total Switching Losses (mJ) V CC = 720V V GE = 15V TJ = 125 C I C = 125A 1000 RG1=15;R G2 = 0 G = Ohm VGE = 15V VCC = 720V IC = 250 A 100 60 IC = 125 A IC = 62.5 A 50 40 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA125TS120U 120 Total Switching Losses (mJ) RG =15;RG2 = 0 G1 = Ohm T J = 125 C VCC = 720V 100 VGE = 15V 80 350 300 V G E = 2 0V T J = 1 25 C V CE m e a su re d a t te rm in a l ( P e a k V oltag e ) -(A) 250 Collector Current 200 S AFE O P E RA TIN G A R E A 60 150 40 100 20 IC, 50 0 0 50 100 150 200 250 300 0 0 200 400 600 800 1000 1200 A 1400 I C , Collector Current (A) VC E , C ollector-to -Em itter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 20000 Instantaneous Forward Current - IF ( A ) VR = 7 2 0V TJ = 1 25 C TJ = 2 5C 16000 I F = 25 0A I F = 1 25 A I F = 6 2.5A 100 T J = 125 C T J = 25C QRR - ( nC) 3.5 12000 8000 4000 10 1.0 1.5 2.0 2.5 3.0 0 500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V F M (V ) d i f /d t - (A / s) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA125TS120U 300 250 I F = 2 50 A I F = 1 25 A I F = 62 .5A 200 VR = 7 2 0V TJ = 1 25 C TJ = 2 5C I F = 25 0A I F = 12 5A 200 I F = 6 2.5A trr - ( ns ) IRRM - ( A ) 100 150 100 50 VR = 72 0 V TJ = 12 5 C TJ = 25 C 0 500 1000 1500 2000 0 500 1000 1500 2000 di f /dt - (A /s) di f /dt - (A /s) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA125TS120U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = Vce Ic dt t1 + 5 S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIc t dt Vd d t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA125TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 600V 600V 4 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA125TS120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50s; single shot. Case Outline -- INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com |
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