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Built-in Damper Diode sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5003 1500 800 6 7(Pulse14) 3.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C 2SC5003 (Ta=25C) 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit A mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 0.80.2 15.60.2 23.00.3 9.50.2 Equivalent circuit B C ( 50 ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 V V V MHz pF a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 tstg (s) 4.0max tf (s) 0.2max 3.35 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V) 7 1.7 A VCE(sat)-IC Characteristics (Typical) 3 (I C: I B= 5 :1) I C - V BE Temperature Characteristics (Typical) 7 (VCE=5V) 1. 4A 6 900 mA 6 Collector Current I C (A) 5 600 mA 2 Collector Current I C( A) 4 4 mp) mp) 1 0 0 1 2 3 4 0 0.2 0.5 1 5 10 0 0 0.5 -30C I B= 100mA 125C 2 2 25C (C (Case 1 (Cas ase Te 3 300mA Temp) e Te 1.0 3.0 1.5 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) h FE - IC Characteristics (Typical) (VCE=5V) 50 20 tstg*t f - IC Characteristics (Typical) j - a( C /W ) . VCC=200V . IC : IB1: -IB2 =5 :1: 2 tstg 3 j-a - t Characteristics t st g*t f ( s) 10 5 DC Cur rent Gain h F E 12 5C Transient Thermal Resistance 1 10 25 C 0C Switching T im e -3 1 0.5 tf 0.5 5 2 0.02 0.05 0.1 0.5 1 5 7 0.1 0.2 0.5 1 5 7 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 100s Reverse Bias Safe Operating Area 20 80 P c - T a Derating 10 Co lle ctor Cu rre nt I C( A) Co lle ctor Cu rre nt I C( A) M aximu m Power Dissipa tion P C( W) 10 5 60 W ith In fin ite he 5 40 at si 1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% nk Without Heatsink Natural Cooling 0.5 20 1 100 500 Collector-Emi tter Voltage V C E( V) 1000 0.1 50 100 500 1000 2000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 123 |
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