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| Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.90.1 0.4 q q q 2.40.2 2.00.2 3.50.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C) 1.0 s 2.50.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.00.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.550.1 1.250.05 0.450.05 Ratings -35 -55 -35 -55 -5 -200 -50 400 150 -55 ~ +150 Unit V 3 2 1 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB745 2SB745A 2SB745 2SB745A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -5V, IE = 2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -100mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT min typ max -100 -1 4.10.2 4.50.1 7 Unit nA A V -35 -55 -35 -55 -5 180 700 - 0.6 - 0.7 150 150 -1 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h VCE(sat) VBE fT NV V V MHz mV FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -160 -140 2SB745, 2SB745A IC -- VCE Ta=25C -160 VCE=-5V Ta=25C -140 IC -- I B Collector power dissipation PC (mW) 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 -300A -250A -200A -150A -100A -50A Collector current IC (mA) IB=-350A -120 -100 -80 -60 -40 -20 0 -10 -12 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE -800 VCE=-5V Ta=25C -700 -100 -120 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE=-5V 25C Ta=75C -80 -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -600 -500 -400 -300 -200 -100 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Collector current IC (mA) -60 -40 - 0.3 25C - 0.1 Ta=75C -20 -25C - 0.03 - 0.01 - 0.1 - 0.3 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 -30 -100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-5V 500 450 500 Ta=75C 400 25C fT -- I E Collector output capacitance Cob (pF) VCB=-5V Ta=25C 20 18 16 14 12 10 8 6 4 2 0 - 0.1 - 0.3 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 10 30 100 400 350 300 250 200 150 100 50 300 -25C 200 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV -- VCE 160 140 IC=-1mA GV=80dB Function=FLAT 300 IC=-1mA GV=80dB Function=RIAA 2SB745, 2SB745A NV -- VCE 160 140 VCE=-10V GV=80dB Function=FLAT NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100k 100 80 60 40 4.7k 20 0 -1 22k Noise voltage NV (mV) 240 Rg=100k 180 120 100 80 60 22k 40 4.7k 20 0 - 0.01 Rg=100k 120 22k 60 4.7k -3 -10 -30 -100 0 -1 -3 -10 -30 -100 - 0.03 - 0.1 - 0.3 -1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV -- IC 300 VCE=-10V GV=80dB Function=RIAA 160 140 NV -- Rg 300 VCE=-10V GV=80dB Function=FLAT NV -- Rg VCE=-10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=-1mA 40 - 0.5mA 20 0 - 0.1mA 180 Noise voltage NV (mV) 240 240 180 120 Rg=100k 22k 4.7k 120 60 60 - 0.5mA 0 IC=-2mA - 0.1mA 10 30 100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 1 3 10 30 100 1 3 Collector current IC (mA) Signal source resistance Rg (k) Signal source resistance Rg (k) 3 |
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