PART |
Description |
Maker |
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
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PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
PXAC241702FCV1R250 PXAC241702FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ?2400 MHz
|
Infineon Technologies A...
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Infineon Technologies A...
|
PTFA182001E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
|
Infineon Technologies AG
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
PXAC260602FCV1R0XTMA1 PXAC260602FC-16 PXAC260602FC |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
|
Infineon Technologies A...
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