| PART |
Description |
Maker |
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET 350 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| NX3008NBKT-115 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| VP0540 VP0535 VP0535N3 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
P-Channel Enhancement-Mode Vertical DMOS FETs
|
SUPERTEX INC
Supertex, Inc
|
| DN3135N8-G |
N-Channel Depletion-Mode Vertical DMOS FETs 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| FDD6632_04 FDD6632 FDD663204 FDD6632NL |
30V N-Channel Logic Level UltraFET Trench Power MOSFET 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET? Trench Power MOSFET 30V, 9A, 70m?/a>
N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| SXVVN0335N1 SXVN0335N1 SUPERTEXINC-SXVVN0335N2 |
3.5 A, 350 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
SUPERTEX INC
|
| NGD8205NT4G NGD8205AN NGD8205ANT4G NGD8205N12 |
Ignition IGBT 20 Amp, 350 Volt, N.Channel DPAK
|
ON Semiconductor
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
|
