| PART |
Description |
Maker |
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| DS1411-S09 DS1411-009 DS1411-11 |
Provides Strong Pullup to 5V for Temperature iButton and EEPROM iButton
|
Maxim Integrated Products
Maxim Integrated Produc...
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| 1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic
In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| HDSOLDERCUP HDVERTICAL 780-M26-113R051 780-MYY-113 |
MALE-HIGH DENSITY
MALE-HIGH DENSITY-MACHINED CONTACTS-VERTICAL
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| DS1921Z |
High-Resolution Thermochron iButton
|
Dallas Semiconductor
|
| DS1921Z-F5 DS1921H12 DS1921H-F5 |
High-Resolution Thermochron? iButton? Range H: 15°C to 46°C, Z: -5°C to 26°C
|
Maxim Integrated Products
|
| ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24
THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24
THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24
THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24
High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28
High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24
High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| DS1982-F3 |
1-kbit Add-Only iButton 1千位只添加iButton
1-kbit Add-Only iButton 1K位只添加iButton®
|
Maxim Integrated Products, Inc.
|
