| PART |
Description |
Maker |
| IDT82V2608 |
INVERSE MULTIPLEXING FOR ATM
|
Integrated Device Technology, Inc.
|
| CX28225 CX28224 |
(CX28224 - CX28229) Inverse Multiplexing
|
Mindspeed
|
| IDT82V2608BB |
8 Channel, T1/E1 Inverse Multiplexing for ATM
|
IDT
|
| IDT82V2616 IDT82V2616BB |
16 Channel, T1/E1 Inverse Multiplexing for ATM
Inverse Multiplexing for ATM, 16-Channel
|
Integrated Device Technology, Inc.
IDT
|
| 28229-PCN-001-A 28973-DSH-001-A-15 |
Test and Ship Location Change for CX28224/5/9 Inverse Multiplexing
Single-Chip SDSL/HDSL Transceiver
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| 85056-0000 |
2.54mm (.100) Pitch DIN 41612/IEC 603-2 Mixed Layout Connector, Female Style M Inverse
|
Molex Electronics Ltd.
|
| IS3H4 |
The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor.
|
ISOCOM COMPONENTS
|
| 0850560036 85056-0036 |
2.54mm (.100) Pitch DIN 41612/IEC 603-2 Mixed Layout Connector, Female Style M Inverse, 42 Circuits, Lead free
|
Molex Electronics Ltd.
|
| 0850170074 |
2.54mm (.100) Pitch DIN 41612/EIC 603-2 Mixed Layout Connector, Male Style M(Hybrid type), Inverse Press-Fit, 0.6μm (24μ) Gold (Au) Selective, 48 Circuits
2.54mm (.100") Pitch DIN 41612/EIC 603-2 Mixed Layout Connector, Male Style M(Hybrid type), Inverse Press-Fit, 0.6楼矛m (24楼矛") Gold (Au) Selective, 48 Circuits
|
Molex Electronics Ltd.
|
| 1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA)
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
BKC International Electronics
Microsemi
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
