| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQI9N25 FQB9N25 FQB9N25TM |
250V N-Channel QFET
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 9.4 A, 250 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQB9P25 FQI9P25 FQB9P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD6N25 FQU6N25TU FQD6N25TF FQD6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQI4N25TU |
250V N-Channel QFET
|
Fairchild Semiconductor
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A
250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A
|
http://
Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQA62N25C |
250V N-Channel MOSFET 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
|
| IRFR234B IRFU234B IRFU234BTUFP001 |
250V N-Channel B-FET / Substitute of IRFU234A
250V N-CHANNEL MOSFET
|
Fairchild Semiconductor
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
