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HY64UD16162B - Mobile PSRAM - 16Mb

HY64UD16162B_9086727.PDF Datasheet


 Full text search : Mobile PSRAM - 16Mb
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Hitachi,Ltd.
MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
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Micron Technology, Inc.
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M Mobile PSRAM - 32Mb
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x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
Hynix Semiconductor, Inc.
HY64UD16322A HY64UD16322A-DF70E HY64UD16322A-DF70I    2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM 200万16位低功T/1C伪静态存储器
Mobile PSRAM - 32Mb
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
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Numonyx B.V
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Qimonda AG
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Qimonda AG
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STMicroelectronics
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Electronic Theatre Controls, Inc.
EM412M1612VTA EM412M1612VTB EM412M1614VTA EM412M16 16Mb ( 2Banks ) Synchronous DRAM
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ETC
 
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