| PART |
Description |
Maker |
| ELXH401VSN181MA25S ELXH201VSN102MA35S ELXH201VSN10 |
Long life, Overvoltage resistant design, 105?
|
United Chemi-Con, Inc.
|
| HI9P0549-9 HI9P0548-9 HI-548 HI4P0548-5 HI4P0546-5 |
Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection 6，差通道通道CMOS模拟MUXs与Active过压保护
Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, PQCC28
Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection 16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 6，差通道通道CMOS模拟MUXs与Active过压保护
Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
Wirewound Inductor; Inductor Type:High Frequency; Inductance:470nH; Inductance Tolerance: 5 %; Current Rating:400mA; Series:IMC; Package/Case:1008; Core Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RoHS Compliant: Yes
Single 16 and 8/ Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection
From old datasheet system
Single 16 and 8 Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| CLP30-200B1 5477 |
Overvoltage and Overcurrent Protection for Telcom Line(电信装备的过压和过流保护)
From old datasheet system
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
|
意法半导
STMicro
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条，100V的，0.230欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品：不适合用于新设计中
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
