| PART |
Description |
Maker |
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| STU26NM60 STU26NM60I |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五（巴西）直|6A条（丁）|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
|
STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
|
| IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
| STQ1NC60R |
N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH?II Power MOSFET
N-CHANNEL 600V 12 OHM 0.3A TO-92 POWERMESH II MOSFET
N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH⑩II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| S1HNK60 STS1HNK60 |
N-CHANNEL 600V - 8 OHM - 0.3A SO-8 SUPERMESH POWER MOSFET N沟道600V 8欧姆- 0.3A的SO - 8 SUPERMESH功率MOSFET
N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
