| PART |
Description |
Maker |
| STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| NTK3043N NTK3043NT1G NTK3043NT5G |
Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 8000 210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
|
ON Semiconductor
|
| NTF3055-100T3LF NTF3055-100T1 NTF3055-100-D |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 3A条（丁）|的SOT - 223
|
ON Semiconductor
|
| MMFT5P03HDT3 MMFT5P03HD MMFT5P03HD-D |
30V N-Channel PowerTrench MOSFET 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 5 Amps, 30 Volts P-Channel SOT-223
|
ONSEMI[ON Semiconductor]
|
| GF2304 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 2.5AI（四）| SOT - 23封装
|
Vishay Intertechnology, Inc.
|
| STN4NE03L 6148 |
N - CHANNEL 30V - 0.037Ohms - 4A - SOT-223 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMicroelectronics
|
| STN2NF1007 STN2NF10 |
N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET
|
STMicroelectronics
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
