PART |
Description |
Maker |
MK60DN256VLL10 MK60DN512VLL10 MK60DX256VLL10 |
Hardware CRC module to support fast cyclic redundancy checks
|
Freescale Semiconductor, Inc
|
MLY10.241 |
DC12-48V (120V), 10A, DUAL REDUNDANCY MODULE
|
PULS GmbH
|
T85HF T85HF10 T85HF100 T85HF120 T85HF20 T85HF40 T8 |
200V Single Diode in a T-Module package 1400V Single Diode in a T-Module package 1000V Single Diode in a T-Module package 1600V Single Diode in a T-Module package POWER RECTIFIER DIODES
|
IRF[International Rectifier]
|
BCM8702 |
10-GbE XAUI TRANSCEIVER WITH HIGH-SPEED REDUNDANCY
|
Broadcom Corp.
|
BCM8021 |
4 CHANNEL MULTIRATE 1.0-3.2 GBPS TRANSCEIVER WITH HIGH SPEED REDUNDANCY
|
Broadcom Corporation.
|
BCM8021 |
4-Channel Multirate 1.0-3.2-Gbps Transceiver with High-Speed Redundancy 4 CHANNEL MULTIRATE 1.0-3.2 GBPS TRANSCEIVER WITH HIGH SPEED REDUNDANCY
|
Broadcom ETC Electronic Theatre Controls, Inc.
|
TPVP348-T240EI TPVP348 TPVP348-T033EI TPVP348-T033 |
UNIVERSAL INPUT HARMONIC CORRECTION AC-DC N 1 REDUNDANCY AND ACTIVE CURRENT SHARING ENCLOSURE BOX WITH FAN TRIPLE OUTPUT 350 WATTS INTERNAL SWITCHING
|
Total Power Internation... TOTAL-POWER[Total Power International]
|
BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块(单开关电源模块N通道增强模式 SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
NNL10-9 NNL10 NNL10-1 NNL10-10 NNL10-11 NNL10-12 N |
Stellaris Ethernet-enabled Intelligent Display Module with PoE RDK 1-OUTPUT 10 W DC-DC REG PWR SUPPLY MODULE ADS1675 Reference Design TAS5631DKD2 Evaluation Module EKT-LM3S9B90 Evaluation Kit Single Board Computer IDM RDK Non-Isolated DC/DC Converters
|
CANDD[C&D Technologies]
|
M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|