| PART |
Description |
Maker |
| AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| LET9060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| LET8180 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MHW1810 |
LDMOS RF Power Transistors.(LDMOS射频功率 LDMOS射频功率晶体管。（LDMOS的射频功率管
|
Motorola Mobility Holdings, Inc.
|
| LET21030C -LET21030C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
| UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
