| PART |
Description |
Maker |
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| 2SK1875 E001406 |
From old datasheet system
N CHANNEL JUNCTION TYPE (HIGH AM HIGH AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7660H TC7660HCOA TC7660HEPA TCA7660 TC7660HCPA T |
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER
The TC7660H is a pin-compatible,high frequency up-grade to the Industry standard TC7660 charge pump voltage converter.It converts a 1.5V to 10V input to a corresponding – 1.5V to – 10V output using only two low--cost capacito
IC-CMOS- BINARY COUNTER 高频7660型DC - DC电压转换
HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER 高频7660型DC - DC电压转换
|
MICROCHIP[Microchip Technology]
Microchip Technology, Inc.
Microchip Technology Inc.
|
| CDV18EF300J03 CD17ED680J03 CD17ED620J03 CDV18EF750 |
High-Frequency, Mica Capacitors High-Frequency Capacitors for CATV and RF Applications
|
Cornell Dubilier Electr...
Cornell Dubilier Electronic...
Cornell Dubilier Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FDMF6824A |
FDMF6824A ?Extra-Small, High-Performance, High-Frequency DrMOS Module
|
Fairchild Semiconductor
|
| FD1500CV-90DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
