| PART |
Description |
Maker |
| M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7060B1ZAQF M36 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| 7782 M58CR032CZB M58CR032D120ZB6T M58CR032D100ZB6T |
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
32 MBIT (2MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY
32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| 7782 M58CR032C100ZB6T M58CR032D100ZB6T M58CR032C85 |
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory
|
意法半导
ST Microelectronics
|
| M58WT032QT70ZB6E M58WT032QT70ZB6F M58WT032KB M58WT |
32- and 64-Mbit (×16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories
|
Numonyx B.V
|
| M58WR032E-ZBT M58WR032EB M58WR032EB100ZB6T M58WR03 |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M58WR128ET M58WR128EB |
128 MBIT (8MB X 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| K8S6415ETB-FC7C K8S6415ETB-DC7C K8S6415ETB K8S6415 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| M58LT256JSB M58LT256JSB8ZA6 M58LT256JST8ZA6 M58LT2 |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
STMicroelectronics
|
| M58MR032-ZCT M58MR032C M58MR032C120ZC6T M58MR032D1 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
32 MBIT (2MB X16, MUX I/O, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
