PART |
Description |
Maker |
SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率,高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
|
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
|
STANFORD[Stanford Microdevices]
|
HMC132 |
GaAs MMIC HIGH-ISOLATION
|
Hittite Microwave Corporation
|
MGFS48V2527_04 MGFS48V2527 MGFS48V252704 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HMC402MS806 HMC402MS8 |
HIGH IP3 GaAs MMIC MIXER, 1.8 - 2.2 GHz
|
Hittite Microwave Corporation
|
HWS341 |
GaAs MMIC SPDT High Power Switch
|
ETC
|
AP640R1-00 |
180 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch 18-40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch
|
Alpha Industries Inc ALPHA[Alpha Industries]
|
HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标 DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|