| PART |
Description |
Maker |
| TP65H050WS |
650V Cascode GaN FET in TO-247
|
Transphorm Inc
|
| NTP8G206N NTP8G206NG |
Power GaN Cascode Transistor
|
ON Semiconductor
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP11NM6007 STP14NK50Z06 STP14NK50Z_06 STB14NK50Z |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| MBC13917 |
General Purpose SiGe C RF Cascode Low Noise Amplifier
|
Freescale Semiconductor, Inc
|
| IRFP460 6179 -IRFP460 |
N-Channel 500V-0.22惟-20A- TO-247 PowerMESH MOSFET(N娌??MOSFET)
N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESH MOSFET的（不适用沟道MOSFET的）
N-Channel Power MOSFET
N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
|
IXYS, Corp.
意法半导
ST Microelectronics
STMicroelectronics
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管（不适用马鞍山沟道功率晶体管
N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
From old datasheet system
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IRFP450 6068 -IRFP450 |
N-Channel 500V-0.33惟-14A- TO-247 PowerMESHTM MOSFET(N娌??MOSFET)
N-Channel 500V-0.33Ω-14A- TO-247 PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.33Ω- 14A条至247 PowerMESHTM MOSFET的（不适用沟道MOSFET的）
N-Channel 500V-0.33Ω-14A- TO-247 PowerMESHTM MOSFET(N沟道MOSFET)
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET
From old datasheet system
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH MOSFET
|
STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
|
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| STW54NK30Z |
N-CHANNEL 300V - 0.052Ohm - 54A TO-247
N-CHANNEL 300V - 0.052з - 54A TO-247 Zener-Protected SuperMESH⑩ MOSFET
N-CHANNEL 300V - 0.052 - 54A TO-247 Zener-Protected SuperMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
