| PART |
Description |
Maker |
| SBLF10L25 SBL10L25 SBLB10L25 |
Low VF Schottky Barrier Rectifier Reverse Voltage 25V Forward Current 10A
Low VF Schottky Barrier Rectifier VF肖特基整流器
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| PMEG3020EJ PMEG3020EH |
PMEG3020EJ; 30 V, 2 A low Vf MEGA Schottky barrier rectifier in SOD323F package
30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
|
PHILIPS[Philips Semiconductors]
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1PS79SB17 1PS66SB17 1PS76SB17 B17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode
4 V, 30 MA LOW CD SCHOTTKY BARRIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| PMEG3010BEV PMEG3010BEA PMEG4010BEV PMEG4010BEA PM |
1 A very low Vf MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package
1 A very low VF MEGA Schottky barrier rectifier 1安很低正向压降MEGA肖特基势垒整流器
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| SCD32L SCD34L |
SURFACE MOUNT LOW VF SCHOTTKY BARRIER RECTIFIER 表面贴装低VF肖特基整
(SCD32L / SCD34L) Surface Mount Low VF Schottky Barrier Rectifier
|
ZOWIE[Zowie Technology Corporation]
|
| KDR411S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NSR01F30NXT5G10 NSR01F30 |
30 V, 100 mA, Low Vf Schottky, DSN2 (0201)
Schottky Barrier Diode
|
ON Semiconductor
|
