| PART |
Description |
Maker |
| NTES1P02 NTES1P02-D |
P?Channel Power MOSFET
Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管)
Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| BSS138LT1 |
N-CHANNEL POWER MOSFET
Power MOSFET 200 mAmps, 50 Volts
|
WILLAS ELECTRONIC CORP
|
| AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
ETC
|
| SPD649-1SMS SPD645-1SMSS SPD645-1SMSTX SPD645-1SMS |
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 600 V, SILICON, SIGNAL DIODE
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 225 V, SILICON, SIGNAL DIODE
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 400 V, SILICON, SIGNAL DIODE
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 500 V, SILICON, SIGNAL DIODE
400 mAMPS 225 Α 600 VOLTS STANDARD RECOVERY RECTIFIER 0.4 A, 300 V, SILICON, SIGNAL DIODE
400 mAMPS 225 ? 600 VOLTS STANDARD RECOVERY RECTIFIER
|
Solid State Devices, Inc.
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2N7002DW1T1 |
115 mAmps,60 Volts
|
WILLAS ELECTRONIC CORP
|
| 2N7000RLRPG 2N7000G 2N7000ZL1G |
Small Signal MOSFET 200 mAmps 60 Volts
|
ON Semiconductor
|
