| PART |
Description |
Maker |
| DPX-S435 |
4th Generation Intel Core Gaming platform
|
Advantech Co., Ltd.
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC10 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC17 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC14 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC50 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SOM-5894C3-S7A1E SOM-5894C3-U5A1E SOM-5894C3-U5B1E |
4th Gen. Intel? Core?Processor COM Express? Basic Module
|
Advantech Co., Ltd.
|
| GT60N321 EA09964 |
High Power Switching Applications The 4th Generation
From old datasheet system
|
Toshiba
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| BFC11 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
Seme LAB
|
