| PART |
Description |
Maker |
| US2410 |
N-Ch 20V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electr...
Unitpower Technology Li...
|
| US2413 |
P-Ch 20V Fast Switching MOSFETs
|
Unitpower Technology Li...
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| ENA0151A CPH3350-TL-H CPH335012 ENA0151 |
P-Channel Power MOSFET, -20V, -3A, 83mOhm, Single CPH3
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| AM29DL400T-80EE AM29DL400T-80EI AM29DL400T-80FC AM |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7306 with Standard Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7306 with Lead Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7104 with Lead Free Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7303 with Standard Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380QPBF with Standard Packaging
30V N-Channel PowerTrench MOSFET
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9910 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Industrial version of our popular IRF7103PBF - standard packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341 with Lead Free Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7101 with Lead Free Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7322D1TR with Lead Free Packaging on Tape and Reel
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7422D2 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9956 with Lead Free Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7301 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7331 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7103 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7750 with Standard Packaging
20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7521D1 with Standard Packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market; Industrial version of our popular IRF7341PBF - standard packaging EEPROM
EEPROM EEPROM
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7380 with Lead Free Packaging
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7329 with Standard Packaging
|
Air Cost Control
Advanced Micro Devices, Inc.
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
