| PART |
Description |
Maker |
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| C2M0160120D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GC2X100MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SHD626031 SHD626031P SHD626031D SHD626031N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| C3D16060D |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SHD626051N SHD626051P SHD626051 SHD626051D |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| GC2X50MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SIDC05D60SIC3 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
