| PART |
Description |
Maker |
| TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MCTV75P60E1 MCTA75P60E1 |
75A / 600V P-Type MOS Controlled Thyristor (MCT)
75A, 600V P-Type MOS Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
| BAX12 BAX12A/A52R |
DIODE CONTROLLED AVALANCHE 可控雪崩二极
Controlled avalanche diode
|
Electronics Industry Public Company Limited
Philipss
Philips Semiconductors
NXP Semiconductors
|
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| NTE570 |
Silicon Controlled Avalanche Diode
|
NTE[NTE Electronics]
|
| IDP30E65D1 |
Emitter Controlled Diode Rapid 1 Series
|
Infineon Technologies A...
|
| IDW75D65D1 |
Emitter Controlled Diode Rapid 1 Dual Anode Series
|
Infineon Technologies A...
|
| IDW80C65D1 |
Emitter Controlled Diode Rapid 1 Common Cathode Series
|
Infineon Technologies A...
|
