| PART |
Description |
Maker |
| GVT72256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| IDW30G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| IPW50R250CP |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A- |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
| KM641003B KM641003B-12 KM641003B-10 KM641003B-8 |
256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5.0V OPERATING), REVOLUTIONARY PIN OUT
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SPP11N60CFD07 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
http://
|
| SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
http://
|
| SPB20N60C3 SPB20N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
