| PART |
Description |
Maker |
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| ENA1118A |
High-Frequency Medium-Output Amplifier Applications
|
Sanyo Semicon Device
|
| CPH3004 |
Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| QVS212CG0R5BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R9BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R7BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| NE678M04-T2-A |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| VXO-1S-PEM-6P |
High frequency SMD VCXO LVPECL Output frequency up to 700 MHz
|
QUARTZCOM the communications company
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
