| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| SCT3160KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| GL195A |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
| SHDC626052 SHDC626052D SHDC626052N SHDC62605207 |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
