| PART |
Description |
Maker |
| FMH25N50ES |
This new power MOSFET realized the low switching loss and low switching noise
|
Fuji Electric
|
| GI811 GI812 GI816 GI818 GI810 GI814 GI817 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 560uF; Voltage: 63V; Case Size: 12.5x40 mm; Packaging: Bulk
Glass Passivated Junction Fast Switching Rectifier(钝化玻璃结型快速转换整流器)
|
GE Security, Inc.
GE[General Semiconductor]
|
| BAT18 BAT18-04 BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
|
SIEMENS A G
|
| BAR65-07 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners)
|
Siemens Semiconductor G...
|
| BAR65-02 BAR65-02W Q62702-A1216 |
Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners)
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| BYC10-600CT BYC10-600CT_3 BYC10-600CT127 |
Rectifier diode ultrafast, low switching loss; Package: week 1, 2005
From old datasheet system
|
NXP SEMICONDUCTORS
Philips
|
| SBAT54XV2T1G BAT54XV2T5G |
Schottky Barrier Diodes Extremely Fast Switching Speed
|
ON Semiconductor
|
| LBAT54ALT3G LBAT54ALT1G LBAT54ALT1G11 |
Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
| L1SS400CST5G |
High speed switching Extremely small surface mounting type.
|
Leshan Radio Company
|
