| PART |
Description |
Maker |
| FP35R12W2T4B11 |
EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
54 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| IDP20E65D2 |
Emitter Controlled Diode
|
Infineon Technologies A...
|
| IDP15E65D1 |
650 V Emitter Controlled technology
|
Infineon Technologies A...
|
| SIDC56D170E6 SIDC56D170E608 |
Fast switching diode chip in Emitter Controlled -Technology
|
Infineon Technologies AG
|
| IRKU162-12 |
Silicon Controlled Rectifier, 355 A, 1200 V, SCR
|
Vishay Semiconductors
|
| SIDC03D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| FP35R12KT4B15 FP35R12KT4-B15 |
EconoPIM?? module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode
EconoPIM? module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode
|
Infineon Technologies AG
|
| PS094-315 |
Voltage Controlled Phase Shifter 700-1200 MHz
|
Skyworks Solutions Inc.
|
| FP10R06W1E3 |
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
|
Infineon Technologies AG
|
