| PART |
Description |
Maker |
| MBR2X050A120 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| CS22 CS22-08IO1M CS22-12IO1M |
Phase Control Thyristors Electrically Isolated Tab 3.925 A, 1200 V, SCR, TO-220AB
Phase Control Thyristors Electrically Isolated Tab 3.925 A, 800 V, SCR, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXUC100N055 |
Electrically Isolated Back Surface
|
IXYS Corporation
|
| IXGR16N170AH1 |
High Voltage IGBT with Diode Electrically Isolated Tab
|
IXYS Corporation
|
| IXSR35N120BD1 |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
IXYS Corporation
|
| IRFK6J150 IRFK6H150 IRFK6H350 IRFK6J350 IRFK6JC50 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION 隔震基电力六角巴基斯坦大会平行芯片配
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
100V SINGLE HEXFET Power MOSFET in a TO-240AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IRFK2D450 IRFK2F450 |
500V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
|
IRF[International Rectifier]
|
