PART |
Description |
Maker |
UGF1006GA UGF1004GA UGF1005GA |
10.0 Amperes Insulated Package Dual Common Anode Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
SFF1605GD |
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
UGF1005G UGF1004G UGF1006G |
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
SFF2001GS SFF2002GS SFF2003GS |
20.0 Amperes Insulated Dual Series Connection Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor POWEREX[Powerex Power Semiconductors]
|
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
|
International Rectifier, Corp.
|
PM200CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
PM25CLB12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
PM50RSK060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|