PART |
Description |
Maker |
S29GL01GT11FHIYYX S29GL512T10DHIYYX S29GL512T11DHA |
1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)
|
Cypress Semiconductor
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
S25FL127S |
128 Mbit (16 Mbyte) MirrorBit Flash Non-Volatile Memory
|
SPANSION
|
S70FL01GS |
1 Gbit (128 Mbyte) 3.0V SPI Flash
|
Cypress Semiconductor
|
M58PR001LE M58PR001LE96ZAC5 M58PR001LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
H27U1G8F2B |
1 Gbit (128 M x 8 bit) NAND Flash
|
Hynix
|
|