| PART |
Description |
Maker |
| IKW50N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IKW40N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| IGZ50N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| IKW50N65EH5 IKW50N65EH5-15 |
650V DuoPack IGBT and full-rated diode High speed series fifth generation
|
Infineon Technologies A...
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IXYN82N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IXYH30N120C3 IXYP30N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJH60F3DPQ-A0 |
600 V - 20 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPE RJP60F0DPE-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
