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AS4C128M8D2-25BCN - 128M x 8 bit DDRII Synchronous DRAM (SDRAM) AS4C128M8D2

AS4C128M8D2-25BCN_9003659.PDF Datasheet
 Full text search : 128M x 8 bit DDRII Synchronous DRAM (SDRAM) AS4C128M8D2

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AS4C128M8D2-25BCN 128M x 8 bit DDRII Synchronous DRAM (SDRAM)
AS4C128M8D2
 Alliance Semiconductor ...
PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
 Elpida Memory, Inc.
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
 SAMSUNG[Samsung semiconductor]
UPD45128163G5-A75-9JF-E UPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL
 Elpida Memory
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
 Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
 NEC[NEC]
UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 36M-BIT DDRII SRAM 4-WORD BURST OPERAT
 NEC[NEC]
M2V28S20TP-8 M2V28S40TP-8 M2V28S30TP-8 M2V28S20TP- 128M Synchronous DRAM
 Mitsubishi Electric Corporation
UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
 NEC[NEC]
UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
 NEC[NEC]
UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1 18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
 NEC, Corp.
UPD44164365F5-E50-EQ1 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 1800万位条DDRII SRAM的分离I / O 2字爆发运
 NEC, Corp.
 
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